We investigate electronic transport through a graphene n-p junction in the quantum Hall effect regime at high perpendicular magnetic field, when the filling factors in the $n$-doped and $p$-doped regions are fixed to 2 and $-2,$ respectively. We compute numerically the conductance $G$, the noise $Q$, and the Fano factor $F$ of the junction when inelastic effects are included along the interface in a phenomenological way, by means of fictitious voltage probes. Using a scaling approach, we extract the system coherence length $L_{\varphi }$ and describe the full crossover between the coherent limit ($W\ll L_{\varphi }$) and the incoherent limit ($W\gg L_{\varphi }$), $W$ being the interface length. While $G$ saturates at the value $e^2/h$ in the incoherent regime, $Q$ and $F$ are found to vanish exponentially for large length $W$. Corrections due to disorder are also investigated. Our results are finally compared to available experimental data.

• Received 7 February 2018
• Revised 20 April 2018

DOI:https://doi.org/10.1103/PhysRevB.97.205445