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Gapped electronic structure of epitaxial stanene on InSb(111)

Cai-Zhi Xu, Yang-Hao Chan, Peng Chen, Xiaoxiong Wang, David Flötotto, Joseph Andrew Hlevyack, Guang Bian, Sung-Kwan Mo, Mei-Yin Chou, and Tai-Chang Chiang
Phys. Rev. B 97, 035122 – Published 11 January 2018

Abstract

Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

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  • Received 12 November 2017

DOI:https://doi.org/10.1103/PhysRevB.97.035122

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cai-Zhi Xu1,2,3, Yang-Hao Chan4, Peng Chen1,2,3, Xiaoxiong Wang1,2,5, David Flötotto1,2, Joseph Andrew Hlevyack1,2, Guang Bian6, Sung-Kwan Mo3, Mei-Yin Chou4,7,8, and Tai-Chang Chiang1,2,8

  • 1Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 2Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
  • 3Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 4Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
  • 5College of Science, Nanjing University of Science and Technology, Nanjing 210094, China
  • 6Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA
  • 7School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 8Department of Physics, National Taiwan University, Taipei 10617, Taiwan

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Issue

Vol. 97, Iss. 3 — 15 January 2018

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