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Theoretical study of the pressure-induced topological phase transition in LaSb

Peng-Jie Guo, Huan-Cheng Yang, Kai Liu, and Zhong-Yi Lu
Phys. Rev. B 96, 081112(R) – Published 21 August 2017

Abstract

By using first-principles electronic structure calculations, we find that material LaSb with extreme magnetoresistance (XMR) undergoes a topological phase transition without breaking any symmetry under a hydrostatic pressure applied between 3 and 4 GPa; meanwhile, the electron-hole compensation remains in its electronic band structure. This makes LaSb an ideal platform for studying what role the topological property plays in the XMR phenomenon, in addition to the electron-hole compensation.

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  • Received 14 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.081112

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Peng-Jie Guo, Huan-Cheng Yang, Kai Liu*, and Zhong-Yi Lu

  • Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China

  • *kliu@ruc.edu.cn
  • zlu@ruc.edu.cn

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Issue

Vol. 96, Iss. 8 — 15 August 2017

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