Observation of type-II recombination in single wurtzite/zinc-blende GaAs heterojunction nanowires

Neimantas Vainorius, Daniel Jacobsson, Sebastian Lehmann, Anders Gustafsson, Kimberly A. Dick, Lars Samuelson, and Mats-Erik Pistol

Phys. Rev. B 89, 165423 – Published 28 April 2014

Abstract

We have investigated a large set of individual wurtzite/zinc-blende GaAs heterojunction nanowires using transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL). In several cases we have combined PL and TEM on the same wire. We find a fairly deep emission that shows a strong blueshift with increasing excitation power density. By using a variety of experiments we show that this emission is due to recombination across a heterojunction with a type II band alignment. The data give a valence band offset of about 100 meV, in excellent agreement with theoretical predictions. Spatially resolved CL data on heterojunction nanowires and PL data on pure wurtzite nanowires show that the band gap of wurtzite GaAs is very close to the band gap of zinc-blende GaAs.

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Received 6 December 2013
Revised 6 April 2014

DOI:https://doi.org/10.1103/PhysRevB.89.165423

Authors & Affiliations

Neimantas Vainorius¹, Daniel Jacobsson¹, Sebastian Lehmann¹, Anders Gustafsson¹, Kimberly A. Dick^1,2, Lars Samuelson¹, and Mats-Erik Pistol^1,*

¹Solid State Physics/The Nanometer Structure Consortium, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
²Center for Analysis and Synthesis, Lund University, P.O. Box 124, SE-221 00 Lund, Sweden

^*mats-erik.pistol@ftf.lth.se

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Vol. 89, Iss. 16 — 15 April 2014

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