Charge transport in pn and npn junctions of silicene

Ai Yamakage, Motohiko Ezawa, Yukio Tanaka, and Naoto Nagaosa
Phys. Rev. B 88, 085322 – Published 29 August 2013

Abstract

We investigate charge transport of pn and npn junctions made from silicene, a Si analogue of graphene. The conductance shows the distinct gate-voltage dependencies peculiar to the topological and nontopological phases, where the topological phase transition is caused by external electric field. Namely, the conductance is (not) suppressed in the np (nn) regime when both sides are topological, and in the nn (np) regime when one side is topological and the other side is nontopological. Furthermore, we find that the conductance is almost quantized to be 0, 1, and 2. Our findings will open a new way to nanoelectronics based on silicene.

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  • Received 23 March 2013

DOI:https://doi.org/10.1103/PhysRevB.88.085322

©2013 American Physical Society

Authors & Affiliations

Ai Yamakage1, Motohiko Ezawa2, Yukio Tanaka1, and Naoto Nagaosa2,3

  • 1Department of Applied Physics, Nagoya University, Nagoya 464-8603, Japan
  • 2Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 3RIKEN Center for Emergent Matter Science, ASI, RIKEN, Wako, Saitama 351-0198, Japan

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Vol. 88, Iss. 8 — 15 August 2013

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