Electronic structure of vacancy resonant states in graphene: A critical review of the single-vacancy case

F. Ducastelle
Phys. Rev. B 88, 075413 – Published 12 August 2013

Abstract

The resonant behavior of vacancy states in graphene is well known but some ambiguities remain concerning, in particular, the nature of the so-called zero energy modes. Other points are not completely elucidated in the case of low but finite vacancy concentration. Here we concentrate on the case of vacancies described within the usual tight-binding approximation. More precisely, we discuss the case of a single vacancy or of a finite number of vacancies in a finite or infinite system.

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  • Received 16 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.075413

©2013 American Physical Society

Authors & Affiliations

F. Ducastelle*

  • Laboratoire d'Etude des Microstructures, ONERA-CNRS, BP 72, 92322 Châtillon Cedex, France

  • *Francois.Ducastelle@onera.fr

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Vol. 88, Iss. 7 — 15 August 2013

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