Cooling of photoexcited carriers in graphene by internal and substrate phonons

Tony Low, Vasili Perebeinos, Raseong Kim, Marcus Freitag, and Phaedon Avouris
Phys. Rev. B 86, 045413 – Published 9 July 2012

Abstract

We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady-state carrier temperatures and photocarrier densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 4 June 2012

DOI:https://doi.org/10.1103/PhysRevB.86.045413

©2012 American Physical Society

Authors & Affiliations

Tony Low1, Vasili Perebeinos1, Raseong Kim2,*, Marcus Freitag1, and Phaedon Avouris1

  • 1IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
  • 2Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA

  • *Present address: Components Research, Intel Corporation, Hillsboro, OR 97124, USA.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 86, Iss. 4 — 15 July 2012

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×