Abstract
Various reaction pathways and corresponding activation barriers in the initial oxidation of Si(100) surfaces are clarified by free-energy sampling techniques combined with the Car-Parrinello molecular dynamics. We find a crucial stable geometry which is ubiquitous during the oxidation and links the dissociation of O molecules and the oxidation of subsurfaces. The calculated free-energy landscape provides a comprehensive picture of the various competing reaction pathways.
- Received 2 February 2012
DOI:https://doi.org/10.1103/PhysRevB.85.205314
©2012 American Physical Society