Microscopic mechanisms of initial oxidation of Si(100): Reaction pathways and free-energy barriers

Kenichi Koizumi, Mauro Boero, Yasuteru Shigeta, and Atsushi Oshiyama
Phys. Rev. B 85, 205314 – Published 16 May 2012

Abstract

Various reaction pathways and corresponding activation barriers in the initial oxidation of Si(100) surfaces are clarified by free-energy sampling techniques combined with the Car-Parrinello molecular dynamics. We find a crucial stable geometry which is ubiquitous during the oxidation and links the dissociation of O2 molecules and the oxidation of subsurfaces. The calculated free-energy landscape provides a comprehensive picture of the various competing reaction pathways.

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  • Received 2 February 2012

DOI:https://doi.org/10.1103/PhysRevB.85.205314

©2012 American Physical Society

Authors & Affiliations

Kenichi Koizumi1,*, Mauro Boero2, Yasuteru Shigeta3, and Atsushi Oshiyama1

  • 1Department of Applied Physics, The University of Tokyo, Hongo, Tokyo 113-8656, Japan
  • 2IPCMS, UMR 7504 CNRS and University of Strasbourg, F-67034 Strasbourg 2, France
  • 3Department of Materials Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

  • *koizumi@comas.t.u-tokyo.ac.jp

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Vol. 85, Iss. 20 — 15 May 2012

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