• Rapid Communication

LO-phonon-assisted polariton lasing in a ZnO-based microcavity

L. Orosz, F. Réveret, F. Médard, P. Disseix, J. Leymarie, M. Mihailovic, D. Solnyshkov, G. Malpuech, J. Zuniga-Pérez, F. Semond, M. Leroux, S. Bouchoule, X. Lafosse, M. Mexis, C. Brimont, and T. Guillet
Phys. Rev. B 85, 121201(R) – Published 12 March 2012

Abstract

Polariton relaxation mechanisms are analyzed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semiclassical Boltzmann equations.

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  • Received 30 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.121201

©2012 American Physical Society

Authors & Affiliations

L. Orosz1,2, F. Réveret1,2,*, F. Médard1,2, P. Disseix1,2, J. Leymarie1,2, M. Mihailovic1,2, D. Solnyshkov1,2, G. Malpuech1,2, J. Zuniga-Pérez3, F. Semond3, M. Leroux3, S. Bouchoule4, X. Lafosse4, M. Mexis5,6, C. Brimont5,6, and T. Guillet5,6

  • 1Institut Pascal (IP), Clermont Université, Université Blaise Pascal, BP 10448, F-63000 Clermont-Ferrand, France
  • 2Institut Pascal (IP), CNRS, UMR 6602, F-63177 Aubière, France
  • 3Centre de Recherche sur l’Hétéro-Epitaxie et ses applications (CRHEA), CNRS, Rue Bernard Grégory, F-06560 Valbonne, France
  • 4Laboratoire de Photonique et de Nanostructures (LPN), CNRS, Route de Nozay, F-91460 Marcoussis, France
  • 5Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2, F-34095 Montpellier, France
  • 6Laboratoire Charles Coulomb UMR 5221, CNRS, F-34095 Montpellier, France

  • *francois.reveret@lasmea.univ-bpclermont.fr

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Vol. 85, Iss. 12 — 15 March 2012

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