Abstract
We explore the effects of cation off-stoichiometry on structural, electrical, optical, and electronic properties of CoZnO normal spinel and CoNiO inverse spinel using theoretic and experimental (combinatorial and conventional) techniques, both at thermodynamic equilibrium and in the metastable regime. Theory predicts that nonequilibrium substitution of divalent Zn on nominally trivalent octahedral sites increases net hole density in CoZnO. Experiment confirms high conductivity and high work function in CoNiO and Zn-rich CoZnO thin films grown by nonequilibrium physical vapor deposition techniques. High -type conductivities of CoZnO (up to 5 S/cm) and CoNiO (up to 204 S/cm) are found over a broad compositional range, they are only weakly sensitive to oxygen partial pressure and quite tolerant to a wide range of processing temperatures. In addition, off-stoichiometry caused by nonequilibrium growth decreases the optical absorption of CoZnO and CoNiO thin films, although the 500-nm thin films still have rather limited transparency. All these properties as well as high work functions make CoZnO and CoNiO thin films attractive for technological applications, such as hole transport layers in organic photovoltaic devices or -type buffer layers in inorganic solar cells.
- Received 11 October 2011
DOI:https://doi.org/10.1103/PhysRevB.85.085204
©2012 American Physical Society