Abstract
Using physical insights and advanced first-principles calculations, we suggest that corundum (-AlO) is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) AlO and the valence-band offsets for these systems are large enough to create an injection barrier. Remarkably, a band gap of 180 meV can be induced in a graphene layer adsorbed on an Al-terminated surface with an electron effective mass of 8 10. Moreover, the band gaps of a graphene/AlO system could be tuned by an external electric field for practical applications.
- Received 21 September 2011
DOI:https://doi.org/10.1103/PhysRevB.84.155406
©2011 American Physical Society