High-temperature thermoelectric response of double-doped SrTiO3 epitaxial films

J. Ravichandran, W. Siemons, D.-W. Oh, J. T. Kardel, A. Chari, H. Heijmerikx, M. L. Scullin, A. Majumdar, R. Ramesh, and D. G. Cahill
Phys. Rev. B 82, 165126 – Published 28 October 2010

Abstract

SrTiO3 is a promising n-type oxide semiconductor for thermoelectric energy conversion. Epitaxial thin films of SrTiO3 doped with both La and oxygen vacancies have been synthesized by pulsed laser deposition. The thermoelectric and galvanomagnetic properties of these films have been characterized at temperatures ranging from 300 to 900 K and are typical of a doped semiconductor. Thermopower values of double-doped films are comparable to previous studies of La-doped single crystals at similar carrier concentrations. The highest thermoelectric figure of merit (ZT) was measured to be 0.28 at 873 K at a carrier concentration of 2.5×1021cm3.

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  • Received 15 July 2010

DOI:https://doi.org/10.1103/PhysRevB.82.165126

©2010 American Physical Society

Authors & Affiliations

J. Ravichandran1,2,*, W. Siemons3, D.-W. Oh4, J. T. Kardel5, A. Chari5, H. Heijmerikx3, M. L. Scullin5, A. Majumdar6, R. Ramesh2,3,5, and D. G. Cahill4

  • 1Applied Science and Technology Graduate Group, University of California, Berkeley, California 94720, USA
  • 2Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Department of Physics, University of California, Berkeley, California 94720, USA
  • 4Department of Materials Science and Engineering, Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, USA
  • 5Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
  • 6ARPA-E, US Department of Energy, 1000 Independence Avenue, Washington, DC 20585, USA

  • *jayakanth@berkeley.edu

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Issue

Vol. 82, Iss. 16 — 15 October 2010

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