• Editors' Suggestion

Surface and bulk electronic structures of LaFeAsO studied by angle-resolved photoemission spectroscopy

L. X. Yang, B. P. Xie, Y. Zhang, C. He, Q. Q. Ge, X. F. Wang, X. H. Chen, M. Arita, J. Jiang, K. Shimada, M. Taniguchi, I. Vobornik, G. Rossi, J. P. Hu, D. H. Lu, Z. X. Shen, Z. Y. Lu, and D. L. Feng
Phys. Rev. B 82, 104519 – Published 23 September 2010

Abstract

The electronic structure of LaFeAsO, a parent compound of iron-arsenic superconductors, is studied by angle-resolved photoemission spectroscopy. By examining its dependence on photon energy, polarization, and sodium dosing, both the bulk and the surface contributions are identified. We find that a bulk band moves toward high binding energies below the structural transition temperature, and shifts smoothly across the spin-density-wave transition by about 25 meV. Our data suggest that the band reconstruction may play a crucial role in the spin-density-wave and the structural transitions. For the surface states, both the LaO-terminated and FeAs-terminated components are revealed. Certain small band shifts are observed for the FeAs-terminated surface states in the spin-density-wave state, which might be a reflection of the bulk electronic-structure reconstruction. Moreover, sharp quasiparticle peaks quickly rise at low temperatures, indicating drastic reduction in the scattering rate. A kink structure in one of the surface band is shown to be possibly related to the enhanced electron-phonon interactions on the polar surface.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
1 More
  • Received 13 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.104519

©2010 American Physical Society

Authors & Affiliations

L. X. Yang1, B. P. Xie1,*, Y. Zhang1, C. He1, Q. Q. Ge1, X. F. Wang2, X. H. Chen2, M. Arita3, J. Jiang3, K. Shimada3, M. Taniguchi3, I. Vobornik4, G. Rossi4,5, J. P. Hu6, D. H. Lu7, Z. X. Shen7, Z. Y. Lu8, and D. L. Feng1,†

  • 1State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, People’s Republic of China
  • 2Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, People’s Republic of China
  • 3Hiroshima Synchrotron Radiation Center and Graduate School of Science, Hiroshima University, Hiroshima 739-8526, Japan
  • 4CNR-INFM, TASC Laboratory, AREA Science Park, Basovizza, 34012 Trieste, Italy
  • 5Dipartimento di Fisica, Universita di Modena e Reggio Emilia, Via Campi 213/A, I-41100 Modena, Italy
  • 6Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA
  • 7Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
  • 8Department of Physics, Renmin University of China, Beijing 100872, People’s Republic of China

  • *bpxie@fudan.edu.cn
  • dlfeng@fudan.edu.cn

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 10 — 1 September 2010

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×