Interplay of pd and dd charge transfer transitions in rare-earth perovskite manganites

A. S. Moskvin, A. A. Makhnev, L. V. Nomerovannaya, N. N. Loshkareva, and A. M. Balbashov
Phys. Rev. B 82, 035106 – Published 9 July 2010

Abstract

We have performed both theoretical and experimental studies of optical response of parent perovskite manganites RMnO3 with a main goal to elucidate nature of clearly visible optical features. Starting with a simple cluster model approach we addressed the both one-center (pd) and two-center (dd) charge transfer (CT) transitions, their polarization properties, the role played by structural parameters, orbital mixing, and spin degree of freedom. Optical complex dielectric function of single-crystalline samples of RMnO3 (R=La,Pr,Nd,Sm,Eu) was measured by ellipsometric technique at room temperature in the spectral range from 1.0 to 5.0 eV for two light polarizations: Ec and Ec. The comparative analysis of the spectral behavior of ε1 and ε2 is believed to provide a more reliable assignment of spectral features. We have found an overall agreement between experimental spectra and theoretical predictions based on the theory of one-center pd CT transitions and intersite dd CT transitions. Our experimental data and theoretical analysis evidence a dual nature of the dielectric gap in nominally stoichiometric matrix of perovskite manganites RMnO3, it is formed by a superposition of forbidden or weak dipole allowed pd CT transitions and intersite dd CT transitions. In fact, the parent perovskite manganites RMnO3 should rather be sorted neither into the CT insulator nor the Mott-Hubbard insulator in the Zaanen, Sawatzky, Allen scheme.

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  • Received 28 April 2009

DOI:https://doi.org/10.1103/PhysRevB.82.035106

©2010 American Physical Society

Authors & Affiliations

A. S. Moskvin1, A. A. Makhnev2, L. V. Nomerovannaya2, N. N. Loshkareva2, and A. M. Balbashov3

  • 1Ural State University, 620083 Ekaterinburg, Russia
  • 2Institute of Metal Physics, 620990 Ekaterinburg, Russia
  • 3Moscow Power Engineering Institute, 105835 Moscow, Russia

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Issue

Vol. 82, Iss. 3 — 15 July 2010

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