Atomistic modeling of strain and diffusion at the Si/SiO2 interface

Patrick Ganster, Guy Tréglia, and Andrés Saúl
Phys. Rev. B 81, 045315 – Published 20 January 2010

Abstract

In this paper, we present a theoretical study of the elastic deformations arising in the vicinity of the Si/SiO2 interface upon oxidation of a silicon substrate. The oxidation is modelized using an algorithm which alternates the inclusion of oxygen atoms and Molecular Dynamics simulations at high temperature. We find that the SiO2 film undergoes an overall compressive state while a more complex strain field is found in the first few Si layers under the interface where tensile and compressive microstructures coexist, the former being definitely larger than the latter. The analysis of the formation energies of the main defects responsible for Si diffusion reveals that, in spite of the complexity of the deformation field at the Si/SiO2 interface, their dependence with respect to the local deformation obeys the same laws as those derived from the application of a simple biaxial stress.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 October 2009

DOI:https://doi.org/10.1103/PhysRevB.81.045315

©2010 American Physical Society

Authors & Affiliations

Patrick Ganster, Guy Tréglia, and Andrés Saúl

  • Centre Interdisciplinaire de Nanoscience de Marseille, CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 81, Iss. 4 — 15 January 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×