Zn-impurity effects on quasiparticle scattering in La2xSrxCuO4 studied by angle-resolved photoemission spectroscopy

T. Yoshida, Seiki Komiya, X. J. Zhou, K. Tanaka, A. Fujimori, Z. Hussain, Z.-X. Shen, Yoichi Ando, H. Eisaki, and S. Uchida
Phys. Rev. B 80, 245113 – Published 18 December 2009

Abstract

Angle-resolved photoemission measurements were performed on Zn-doped La2xSrxCuO4 to investigate the effects of Zn impurities on the low-energy electronic structure. The Zn-impurity-induced increase in the quasiparticle width in momentum distribution curves (MDCs) is approximately isotropic on the entire Fermi surface and energy independent near the Fermi level (EF). The increase in the MDC width is consistent with the increase in the residual resistivity due to the Zn impurities if we assume the carrier number to be 1x for x=0.17 and the Zn impurity to be a potential scatterer close to the unitarity limit. For x=0.03, the residual resistivity is found to be higher than that expected from the MDC width, and the effects of antiferromagnetic fluctuations induced around the Zn impurities are discussed. The leading edges of the spectra near (π,0) for x=0.17 are shifted toward higher energies relative to EF with Zn substitution, indicating a reduction in the superconducting gap.

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  • Received 11 August 2009

DOI:https://doi.org/10.1103/PhysRevB.80.245113

©2009 American Physical Society

Authors & Affiliations

T. Yoshida1, Seiki Komiya2, X. J. Zhou3, K. Tanaka3, A. Fujimori1, Z. Hussain4, Z.-X. Shen3, Yoichi Ando5, H. Eisaki6, and S. Uchida1

  • 1Department of Physics, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan
  • 3Department of Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305, USA
  • 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
  • 6National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan

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Vol. 80, Iss. 24 — 15 December 2009

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