Conductance distribution in doped and defected graphene nanoribbons

Antonino La Magna, Ioannis Deretzis, Giuseppe Forte, and Renato Pucci
Phys. Rev. B 80, 195413 – Published 17 November 2009

Abstract

Electronic transport at the μm length scale is theoretically investigated for N-doped and vacancy damaged graphene nanoribbons. In these systems, localization due to scattering is strongly energy dependent, and this fact leads to the appearance of conductance quasigaps in the spectral region of the resonance states. Conductance fluctuations are very large in the quasigap regions and increase linearly with the system size. The single parameters scaling hypothesis is not verified for energies in a zone including the charge neutrality point while it is valid for energies away from this zone.

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  • Received 29 August 2009

DOI:https://doi.org/10.1103/PhysRevB.80.195413

©2009 American Physical Society

Authors & Affiliations

Antonino La Magna

  • CNR–IMM, Z.I. VIII Strada 5, 95121 Catania, Italy

Ioannis Deretzis

  • Scuola Superiore, Università di Catania, I-95123 Catania, Italy and CNR–IMM, Z.I. VIII Strada 5, 95121 Catania, Italy

Giuseppe Forte

  • Dipartimento di Scienze Chimiche, Facoltà di Farmacia, Università di Catania, Viale A. Doria 6, I-95126 Catania, Italy

Renato Pucci

  • Dipartimento di Fisica e Astronomia, Università di Catania and CNISM, UdR di Catania, Via S. Sofia 64, I-95123 Catania, Italy

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Issue

Vol. 80, Iss. 19 — 15 November 2009

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