Exchange Scattering in a Ferromagnetic Semiconductor

R. W. Cohrane, F. T. Hedgcock, and J. O. Ström-Olsen
Phys. Rev. B 8, 4262 – Published 1 November 1973
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Abstract

Experimental studies of magnetoresistance and magnetization on the degenerate magnetic semiconductor (GeTe)99(MnTe)1 indicate that the transport properties correlate with the square of the magnetization both above and below the ferromagnetic transition. A simple spin-flip scattering mechanism yields a value for |Jsd| of 0.8 eV in agreement with the dependence of the Curie-Weiss temperature on manganese concentration.

  • Received 8 May 1973

DOI:https://doi.org/10.1103/PhysRevB.8.4262

©1973 American Physical Society

Authors & Affiliations

R. W. Cohrane, F. T. Hedgcock, and J. O. Ström-Olsen

  • Eaton Electronics Laboratory, McGill University, Montreal, Quebec, Canada

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Issue

Vol. 8, Iss. 9 — 1 November 1973

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