Effect of the surrounding oxide on the photoabsorption spectra of Si nanocrystals

Laura Koponen, Lasse O. Tunturivuori, Martti J. Puska, and Risto M. Nieminen
Phys. Rev. B 79, 235332 – Published 26 June 2009

Abstract

A systematic study of the optical absorption of small silicon nanocrystals (Si-NCs) embedded in silicon dioxide is performed using real-time time-dependent density-functional theory. The modeled Si-NCs contain up to 47 Si atoms with the surrounding oxide being described by a shell of SiO2. The oxide-embedded Si-NCs exhibit absorption spectra that differ significantly from the spectra of the hydrogen-passivated Si-NCs. In particular, the minimum absorption energy is found to decrease when the Si-NCs are exposed to dioxide coating. Unexpectedly, the absorption energy of the oxide-embedded Si-NCs remains approximately constant for core sizes down to 17 atoms, whereas the absorption energy of the hydrogen-passivated Si-NCs increases with decreasing crystal size. This trend suggests a different mechanism for producing the lowest-energy excitations in these two cases.

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  • Received 5 March 2009

DOI:https://doi.org/10.1103/PhysRevB.79.235332

©2009 American Physical Society

Authors & Affiliations

Laura Koponen*, Lasse O. Tunturivuori, Martti J. Puska, and Risto M. Nieminen

  • Department of Applied Physics, Helsinki University of Technology, P.O. Box 1100, 02015 TKK, Finland

  • *Corresponding author; lak@fyslab.hut.fi

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Vol. 79, Iss. 23 — 15 June 2009

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