Synthesis, structural, and transport properties of the hole-doped superconductor Pr1xSrxFeAsO

Gang Mu, Bin Zeng, Xiyu Zhu, Fei Han, Peng Cheng, Bing Shen, and Hai-Hu Wen
Phys. Rev. B 79, 104501 – Published 3 March 2009

Abstract

Superconductivity was achieved in PrFeAsO by partially substituting Pr3+ with Sr2+. The electrical transport properties and structure of this superconductor Pr1xSrxFeAsO at different doping levels (x=0.050.25) were investigated systematically. It was found that the lattice constants (a and c axes) increase monotonously with Sr or hole concentration. The superconducting transition temperature at about 16.3 K (95% ρn) was observed around the doping level of 0.200.25. A detailed investigation was carried out in the sample with doping level of x=0.25. The domination of holelike charge carriers in this material was confirmed by Hall-effect measurements. The magnetoresistance (MR) behavior can be well described by a simple two-band model. The upper critical field of the sample with Tc=16.3K (x=0.25) was estimated to be beyond 45 T. Our results suggest that the hole-doped samples may have higher upper critical fields comparing to the electron-doped ones, due to the higher quasiparticle density of states at the Fermi level.

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  • Received 9 October 2008

DOI:https://doi.org/10.1103/PhysRevB.79.104501

©2009 American Physical Society

Authors & Affiliations

Gang Mu, Bin Zeng, Xiyu Zhu, Fei Han, Peng Cheng, Bing Shen, and Hai-Hu Wen*

  • National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, People’s Republic of China

  • *hhwen@aphy.iphy.ac.cn

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Vol. 79, Iss. 10 — 1 March 2009

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