Influence of nitrogen doping on the radial breathing mode in carbon nanotubes

Iann C. Gerber, Pascal Puech, Anis Gannouni, and Wolfgang Bacsa
Phys. Rev. B 79, 075423 – Published 11 February 2009

Abstract

The influence of nitrogen doping in semiconducting carbon nanotubes is investigated by first-principles calculations considering a wide variety of substitution sites and concentrations. The frequency of the radial breathing mode of a (8,0) nanotube is calculated using density-functional theory and frozen-phonon approximation for different doping concentrations, substitution sites, and vacancies. The results are compared to a one-dimensional first-neighbor spring constant model using experimental parameters. We estimate the effect of doping in Raman spectra by examining the electronic band structure of doped carbon nanotubes.

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  • Received 2 October 2008

DOI:https://doi.org/10.1103/PhysRevB.79.075423

©2009 American Physical Society

Authors & Affiliations

Iann C. Gerber1,*, Pascal Puech2, Anis Gannouni1,†, and Wolfgang Bacsa2

  • 1INSA, UPS, CNRS, Université de Toulouse, LPCNO 135 Avenue de Rangueil, F-31077 Toulouse, France
  • 2UPS, CNRS, Université de Toulouse, CEMES 29 rue Jeanne Marvig, F-31055 Toulouse, France

  • *igerber@insa-toulouse.fr
  • Present address: El-Manar Preparatory Institute for Engineers Studies, Tunis-El Manar University, Tunisia.

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Issue

Vol. 79, Iss. 7 — 15 February 2009

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