Magnetic memory in ferromagnetic thin films via exchange coupling

K. Chesnel, E. E. Fullerton, M. J. Carey, J. B. Kortright, and S. D. Kevan
Phys. Rev. B 78, 132409 – Published 21 October 2008

Abstract

We show the possibility of creating magnetic domain memory in thin ferromagnetic films by inducing spatially varying exchange coupling interactions. We evidence this phenomenon in a perpendicular exchange bias film made of [Co/Pd] IrMn multilayers. Our coherent x-ray magnetic scattering speckle correlation study shows that the film exhibits no memory at room temperature but acquires a very high degree of magnetic memory, above 80% with subsequent field cycling when the sample is zero-field cooled below the blocking temperature of the IrMn layers (T<275K).

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  • Received 4 June 2008

DOI:https://doi.org/10.1103/PhysRevB.78.132409

©2008 American Physical Society

Authors & Affiliations

K. Chesnel1,*, E. E. Fullerton2,†, M. J. Carey2, J. B. Kortright1, and S. D. Kevan3

  • 1Lawrence Berkeley National Laboratory, Berkeley, California 94720,USA
  • 2Hitachi Global Storage Technologies, San Jose, California 95135, USA
  • 3Department of Physics, University of Oregon, Eugene, Oregon 97403, USA

  • *Present address: BYU, Provo, Utah 84602, USA.
  • Present address: UCSD, San Diego, California 92093-0401, USA.

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Issue

Vol. 78, Iss. 13 — 1 October 2008

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