Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of $4\mathrm{nm}$ were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from $0.3\mathrm{ps}\text{to}2.3\mathrm{ns}$ using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a $150\mathrm{fs}$ pump pulse at $390\mathrm{nm}$ was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within $0.6\mathrm{ps}$. Exciton capturing by surface states forming shallow traps in the amorphous $\mathrm{Si}{\mathrm{O}}_x$ shell was found to occur with a time constant of $4\mathrm{ps}$, whereas deeper traps presumably localized in the $\mathrm{Si}\text{−}\mathrm{Si}{\mathrm{O}}_x$ interface gave rise to exciton trapping processes with time constants of 110 and $180\mathrm{ps}$. Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots $(>2\mathrm{nm})$ was observed to take place within 400 or $700\mathrm{fs}$.

• Received 18 May 2007

DOI:https://doi.org/10.1103/PhysRevB.77.115343