Fundamental transport processes in ensembles of silicon quantum dots

I. Balberg, E. Savir, J. Jedrzejewski, A. G. Nassiopoulou, and S. Gardelis

Phys. Rev. B 75, 235329 – Published 27 June 2007

Abstract

For a better understanding of the physical properties of semiconductor quantum dot ensembles, we have followed the behaviors of the transport and photoluminescence above, at, and below the percolation threshold of ensembles of Si quantum dots that are embedded in a $Si O_{2}$ matrix. Our study revealed the roles of the interdot conduction, the single dot charging, and the connectivity in such systems. We conclude that while the first two determine the global transport, a connectivity dependent migration determines the coupling between the electrical and optical properties.