Evidence of environmental strains on charge injection in silole-based organic light-emitting diodes

N. Huby, L. Hirsch, L. Aubouy, P. Gerbier, A. Van Der Lee, F. Amy, and A. Kahn
Phys. Rev. B 75, 115416 – Published 15 March 2007

Abstract

Using density functional theory (DFT) computations, we have demonstrated a substantial skeletal relaxation when the structure of 2,5-[bis-(4-anthracene-9-yl-phenyl]-1,1-dimethyl-3,4-diphenyl-silole (BAS) is optimized in the gas-phase comparing with the molecular structure determined from monocrystal x-ray diffraction. The origin of such a relaxation is explained by a strong environmental strains induced by the presence of anthracene entities. Moreover, the estimation of the frontier orbital levels showed that this structural relaxation affects mainly the LUMO that is lowered of 190meV in the gas phase. To check if these theoretical findings would be confirmed for thin films of BAS, we turned to ultraviolet photoemission spectroscopy and/or inverse photoemission spectroscopy and electro-optical measurements. Interestingly, the study of the current density or voltage and luminance or voltage characteristics of an ITOPEDOTBASAu device clearly demonstrated a very unusual temperature-dependent behavior. Using a thermally assisted tunnel transfer model, we found that this behavior likely originated from the variation of the electronic affinity of the silole derivative with the temperature. The thermal agitation relaxes the molecular strains in thin films as it is shown when passing from the crystalline to the gas phase. The relaxation of the intramolecular thus induces an increase of the electronic affinity and, as a consequence, the more efficient electron injection in organic light-emitting diodes.

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  • Received 19 July 2006

DOI:https://doi.org/10.1103/PhysRevB.75.115416

©2007 American Physical Society

Authors & Affiliations

N. Huby and L. Hirsch*

  • Université de Bordeaux, CNRS, UMR 5218, 351 cours de la Libération, 33405 Talence Cedex, France

L. Aubouy and P. Gerbier

  • Institut Charles Gerhardt, UMR 5253, Université Montpellier II, CC 007, Place Eugène Bataillon, 34095 Montpellier Cedex, France

A. Van Der Lee

  • CNRS UMR 1919, Institut Européen des Membranes - IEM, Route de Mende, 34293 Montpellier Cedex 5, France

F. Amy and A. Kahn

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *Corresponding author. Electronic address: lionel.hirsch@ims-bordeaux.fr

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Vol. 75, Iss. 11 — 15 March 2007

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