Tunneling transport through a biased quantum dot–quantum well system: Photon-induced negative differential conductance

V. M. Apalkov
Phys. Rev. B 75, 045337 – Published 24 January 2007

Abstract

We report on our study of tunneling transport through a quantum dot–quantum well system under finite bias voltage. If one of the excited states of the dot is resonantly coupled to a contact through a level of quantum well then the system shows negative differential conductance, which can be tuned by the intensity of external illumination. The origin of negative differential conductance is redistribution of electrons in the dot due to interelectron repulsion and photon absorption.

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  • Received 9 June 2006

DOI:https://doi.org/10.1103/PhysRevB.75.045337

©2007 American Physical Society

Authors & Affiliations

V. M. Apalkov

  • Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA

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Issue

Vol. 75, Iss. 4 — 15 January 2007

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