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Millisecond spin-flip times of donor-bound electrons in GaAs

Kai-Mei C. Fu, Wenzheng Yeo, Susan Clark, Charles Santori, Colin Stanley, M. C. Holland, and Yoshihisa Yamamoto
Phys. Rev. B 74, 121304(R) – Published 14 September 2006

Abstract

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity nGaAs. This is three orders of magnitude larger than previously reported lifetimes in nGaAs. Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4T. This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.

    • Received 28 June 2006

    DOI:https://doi.org/10.1103/PhysRevB.74.121304

    ©2006 American Physical Society

    Authors & Affiliations

    Kai-Mei C. Fu1,*, Wenzheng Yeo1, Susan Clark1, Charles Santori2, Colin Stanley3, M. C. Holland3, and Yoshihisa Yamamoto1,†

    • 1Quantum Information Project, SORST, JST, Edward L. Ginzton Laboratory, Stanford University, Stanford, California 94305-4085, USA
    • 2Quantum Science Research, Hewlett-Packard Laboratories, 1501 Page Mill Road, MS1123, Palo Alto, California 94304, USA
    • 3Department of Electronics and Electrical Engineering, Oakfield Avenue, University of Glasgow, Glasgow G12 8LT, United Kingdom

    • *Electronic address: kaimeifu@stanford.edu
    • Also at: National Institute of Informatics, Tokyo, Japan.

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    Issue

    Vol. 74, Iss. 12 — 15 September 2006

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