Interface bonding of a ferromagnetic/semiconductor junction: A photoemission study of FeZnSe(001)

M. Eddrief, M. Marangolo, V. H. Etgens, S. Ustaze, F. Sirotti, M. Mulazzi, G. Panaccione, D. H. Mosca, B. Lépine, and P. Schieffer
Phys. Rev. B 73, 115315 – Published 14 March 2006

Abstract

We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. FeZnSe(001) is considered as an example of a very low reactivity interface system and it is expected to constitute large tunnel magnetoresistance devices. We focus on the interface atomic environment, on the microscopic processes of the interface formation and on the iron valence band. We show that the Fe contact with ZnSe induces a chemical conversion of the ZnSe outermost atomic layers. The main driving force that induces this rearrangement is the requirement for a stable Fe-Se bonding at the interface and a Se monolayer that floats at the Fe growth front. The released Zn atoms are incorporated in substitution in the Fe lattice position. This formation process is independent of the ZnSe surface termination (Zn or Se). The Fe valence-band evolution indicates that the d-states at the Fermi level show up even at submonolayer Fe coverage but that the Fe bulk character is only recovered above 10 monolayers. Indeed, the Fe Δ1-band states, theoretically predicted to dominate the tunneling conductance of FeZnSeFe junctions, are strongly modified at the FM/SC interface.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 10 November 2005

DOI:https://doi.org/10.1103/PhysRevB.73.115315

©2006 American Physical Society

Authors & Affiliations

M. Eddrief, M. Marangolo, and V. H. Etgens

  • Institut des NanoSciences de Paris, Université Pierre et Marie Curie-Paris 6, Université Denis Diderot-Paris 7, INSP-UMR CNRS 7588, Campus Boucicaut 140 rue de Lourmel, 75015 Paris, France

S. Ustaze and F. Sirotti

  • Laboratoire pour l’Utilisation du Rayonnement Electromagnétique, CNRS-Université de Paris-Sud, Paris, France

M. Mulazzi* and G. Panaccione

  • TASC Laboratory INFM—CNR in Area Science Park, S.S. 14, Km 163.5, I-34012 Trieste, Italy

D. H. Mosca

  • Departamento de Física, UFPR, Centro Politécnico C. P. 19091, 81531-990 Curitiba PR, Brazil

B. Lépine and P. Schieffer

  • Equipe de Physique des Surfaces et des Interfaces, UMR CNRS-Université n° 6627, Bât. 11C, Campus de Beaulieu, F35042 Rennes Cédex, France

  • *Also at Dip. Fisica, Univ. Modena e Reggio Emilia, Via. A. Campi 213/A, I-41100 Modena, Italy.

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 73, Iss. 11 — 15 March 2006

Reuse & Permissions
Access Options

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×