Abstract
The temperature dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing , the evolution of a small gap at the Fermi level is observed in the DOS, indicating a -type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at in accordance with transport and optical experiments. The dependence of the gap, which gets smeared out quickly at high as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.
- Received 6 October 2005
DOI:https://doi.org/10.1103/PhysRevB.72.233202
©2005 American Physical Society