Ultraviolet laser photoemission spectroscopy of FeSi: Observation of a gap opening in density of states

K. Ishizaka, T. Kiss, T. Shimojima, T. Yokoya, T. Togashi, S. Watanabe, C. Q. Zhang, C. T. Chen, Y. Onose, Y. Tokura, and S. Shin
Phys. Rev. B 72, 233202 – Published 16 December 2005

Abstract

The temperature (T) dependent gap formation in the density of states (DOS) of FeSi has been investigated by angle-integrated laser photoemission spectroscopy (PES). With decreasing T, the evolution of a small gap (60meV) at the Fermi level is observed in the DOS, indicating a p-type semiconducting character of this compound. The Fermi edge, which has been controversial in all past PES studies, is extremely small at 5K in accordance with transport and optical experiments. The T dependence of the gap, which gets smeared out quickly at high T as in optical conductivity spectrum, suggests the existence of a strong scattering mechanism beyond thermal excitations.

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  • Received 6 October 2005

DOI:https://doi.org/10.1103/PhysRevB.72.233202

©2005 American Physical Society

Authors & Affiliations

K. Ishizaka1, T. Kiss2, T. Shimojima1, T. Yokoya3, T. Togashi4, S. Watanabe1, C. Q. Zhang5, C. T. Chen5, Y. Onose6, Y. Tokura6,7,8, and S. Shin1,4

  • 1Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-0198, Japan
  • 3The Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan
  • 4The Institute of Physical and Chemical Research (RIKEN), Sayo-gun, Hyogo 679-5143, Japan
  • 5Beijing Center for Crystal R&D, Chinese Academy of Science, Zhongguancun, Beijing 100080, China
  • 6Spin Superstructure Project, ERATO, Japan Science and Technology Agency (JST), Tsukuba 305-8562, Japan
  • 7Department of Applied Physics, University of Tokyo, Tokyo 113-8656, Japan
  • 8Correlated Electron Research Center (CERC), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8562, Japan

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Issue

Vol. 72, Iss. 23 — 15 December 2005

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