Influence of Ni doping on the electronic structure of Ni2MnGa

Aparna Chakrabarti, C. Biswas, S. Banik, R. S. Dhaka, A. K. Shukla, and S. R. Barman
Phys. Rev. B 72, 073103 – Published 5 August 2005

Abstract

The modifications in the electronic structure of Ni2+xMn1xGa by Ni doping have been studied using the full potential linearized augmented plane wave method and ultraviolet photoemission spectroscopy. Ni 3d-related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin density of states (DOS) with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.

    • Received 12 May 2005

    DOI:https://doi.org/10.1103/PhysRevB.72.073103

    ©2005 American Physical Society

    Authors & Affiliations

    Aparna Chakrabarti1, C. Biswas2, S. Banik2, R. S. Dhaka2, A. K. Shukla2, and S. R. Barman2,*

    • 1Solid State Laser Division, Centre for Advanced Technology, Indore, 452013, Madhya Pradesh, India
    • 2UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, 452017, Madhya Pradesh, India

    • *Corresponding author. Electronic address: srbarman@mailcity.com, barman@csr.ernet.in

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    Issue

    Vol. 72, Iss. 7 — 15 August 2005

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