Pattern formation in paramagnetic diluted magnetic semiconductors

M. Vladimirova, D. Scalbert, and C. Misbah
Phys. Rev. B 71, 233203 – Published 24 June 2005

Abstract

Magnetization patterning by injection of nonequilibrium electron spins in paramagnetic diluted magnetic semiconductors is studied theoretically. The system is shown to undergo an instability in a region of the parameter space defined by the carriers generation rate and magnetic field. The bifurcation is found to be of subcritical nature. Existing experimental results are examined within this model and experiments are proposed.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 9 March 2005

DOI:https://doi.org/10.1103/PhysRevB.71.233203

©2005 American Physical Society

Authors & Affiliations

M. Vladimirova and D. Scalbert

  • Groupe d’Etude des Semi-conducteurs, UMR 5650 CNRS-Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex, France

C. Misbah

  • Laboratoire de Spectrométrie Physique, UMR 5588 CNRS-Université Joseph-Fourier Grenoble, BP87, 38402 St-Martin d’Hères Cedex France

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 71, Iss. 23 — 15 June 2005

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×