A mechanism is described by which interface electronic properties can affect bulk semiconductor behavior. In particular, experimental measurements by photoreflectance of $\mathrm{Si}\mathrm{}\left(100\right)-{\mathrm{SiO}}_2$ interfaces show how a controllable degree of band bending can be introduced near the interface by ion bombardment and annealing. The resulting electric field near the interface can affect dopant concentration profiles deep within the semiconductor bulk by drastically changing the effective interfacial boundary condition for annihilation of charged interstitial atoms formed during bombardment. Kinetic measurements of band-bending evolution during annealing show that the bending persists for substantial periods even above 1000 °C. Unusually low activation energies for the evolution point to a distribution of energies for healing of bombardment-generated interface defects. The findings have significant implications for p-n junction formation during complementary metal oxide semiconductor device processing.

• Received 14 February 2003

DOI:https://doi.org/10.1103/PhysRevB.68.195311