Electron correlation effects in electron-hole recombination in organic light-emitting diodes

Kunj Tandon, S. Ramasesha, and S. Mazumdar
Phys. Rev. B 67, 045109 – Published 30 January 2003
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Abstract

We develop a general theory of electron-hole recombination in organic light-emitting diodes that leads to formation of emissive singlet excitons and nonemissive triplet excitons. We briefly review other existing theories and show how our approach is substantively different from these theories. Using an exact time-dependent approach to the interchain/intermolecular charge transfer within a long–range interacting model we find that (i) the relative yield of the singlet exciton in polymers is considerably larger than the 25% predicted from statistical considerations, (ii) the singlet exciton yield increases with chain length in oligomers, and (iii) in small molecules containing nitrogen heteroatoms, the relative yield of the singlet exciton is considerably smaller and may be even close to 25%. The above results are independent of whether or not the bond-charge repulsion, X, is included in the interchain part of the Hamiltonian for the two-chain system. The larger (smaller) yield of the singlet (triplet) exciton in carbon-based long-chain polymers is a consequence of both its ionic (covalent) nature and smaller (larger) binding energy. In nitrogen containing monomers, wave functions are closer to the noninteracting limit, and this decreases (increases) the relative yield of the singlet (triplet) exciton. Our results are in qualitative agreement with electroluminescence experiments involving both molecular and polymeric light emitters. The time-dependent approach developed here for describing intermolecular charge-transfer processes is completely general and may be applied to many other such processes.

  • Received 26 July 2002

DOI:https://doi.org/10.1103/PhysRevB.67.045109

©2003 American Physical Society

Authors & Affiliations

Kunj Tandon1,*, S. Ramasesha1, and S. Mazumdar2

  • 1Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560 012, India
  • 2Department of Physics and The Optical Sciences Center, University of Arizona, Tucson, Arizona 08721

  • *Present address: GE John F. Welch Technology Center, Sy 152, Export Promotion Industrial Park, Ph 2, Hoodi Village, White Field Road, Bangalore 560 066, India

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Vol. 67, Iss. 4 — 15 January 2003

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