Spin relaxation and antisymmetric exchange in n-doped III-V semiconductors

L. P. Gor’kov and P. L. Krotkov
Phys. Rev. B 67, 033203 – Published 17 January 2003
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Abstract

Recently, Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in n-doped GaAs in the regime close to the metal-insulator transition. We derive the correct spin Hamiltonian and apply it to the determination of spin dephasing time using the method of moments expansion. Our estimates would give longer than the observed values of the spin-relaxation time.

  • Received 20 September 2002

DOI:https://doi.org/10.1103/PhysRevB.67.033203

©2003 American Physical Society

Authors & Affiliations

L. P. Gor’kov and P. L. Krotkov

  • National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32310
  • L. D. Landau Institute for Theoretical Physics, Russian Academy of Sciences, 2 Kosygina Street, Moscow 117334, Russia

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Vol. 67, Iss. 3 — 15 January 2003

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