In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon

Iwao Matsuda, Toshiaki Ohta, and Han Woong Yeom
Phys. Rev. B 65, 085327 – Published 8 February 2002
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Abstract

In-plane dispersion of the quantum-well states (QWS’s) associated with the electron confinement in metastable epitaxial Ag films grown on the Si(111)7×7 and Si(001)2×1 surfaces is investigated by angle-resolved photoemission using synchrotron radiation. In contrast to the free-electron-like behavior expected, these QWS’s show intriguing dispersions such as (i) a significant enhancement of the in-plane effective mass with decreasing binding energy and (ii) a splitting of a QWS into two electronic states with different dispersions at off-normal emission. Such unexpected electronic properties of a QWS are obviously related to the substrate band structure. Further the QWS splitting is explained by the energy-dependent phase shift of the film-substrate interface occurring at the substrate band edge.

  • Received 27 July 2001

DOI:https://doi.org/10.1103/PhysRevB.65.085327

©2002 American Physical Society

Authors & Affiliations

Iwao Matsuda and Toshiaki Ohta

  • Department of Chemistry, The University of Tokyo, Hongo, Tokyo 113-0033, Japan

Han Woong Yeom*

  • Atomic-scale Surface Science Research Center and Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea

  • *Corresponding author. FAX: +82-2-312-7090. Email address: yeom@phya.yonsei.ac.kr

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Issue

Vol. 65, Iss. 8 — 15 February 2002

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