Polarization properties, high-order Raman spectra, and frequency asymmetry between Stokes and anti-Stokes scattering of Raman modes in a graphite whisker

PingHeng Tan, ChengYong Hu, Jian Dong, WanCi Shen, and BaoFa Zhang
Phys. Rev. B 64, 214301 – Published 12 November 2001
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Abstract

The Raman spectra of a new type of graphite whiskers have been measured in the range of 1507800cm1. The intensity of the overtone (2D) located at 2700cm1 is found to be about 10 times stronger than that of the C-C stretching mode (G) at 1582cm1. Because of the peculiar enhancement of the 2D mode, high-order Raman bands up to fifth order at 7500cm1 have been observed. Polarized micro-Raman spectroscopy has been performed on an individual graphite whisker, and angular-dependent intensity measurements of all Raman modes in the VV and HV geometries are in agreement with the theoretical calculated results. Laser-energy-dependent dispersion effects and the frequency discrepancy of Raman modes between their Stokes and anti-Stokes lines in graphite whiskers are also carefully investigated. The energy dispersion of the D mode and G mode is very similar to that of highly oriented pyrolytic graphite (HOPG). In contrast to the Raman spectra of HOPG and other graphite materials, two laser-energy-dependent Raman lines are revealed in the low-frequency region of the Raman spectra of graphite whiskers, which are believed to be the resonantly enhanced phonons in the transverse-acoustic and longitudinal-acoustic phonon branches. Moreover, the obvious energy dispersion of the D mode at ∼1620 cm1 is observed in graphite whiskers. The results clearly reveal how strongly the peak parameters of Raman modes of graphite materials are dependent on their structural geometry. The Stokes and anti-Stokes scattering experiments show that the frequency discrepancy between the Stokes and anti-Stokes sides of a Raman mode in graphite materials is equal to the frequency value covered by the one-phonon energy of this Raman mode in its frequency versus laser energy curve, which is the product of the one-phonon energy of this mode (Eωs) and the value of its laser-energy dispersions (Eωs/ɛL).

  • Received 29 March 2001

DOI:https://doi.org/10.1103/PhysRevB.64.214301

©2001 American Physical Society

Authors & Affiliations

PingHeng Tan* and ChengYong Hu

  • National Laboratory for Superlattices and Microstructures, P.O. Box 912, Beijing 100083, China

Jian Dong and WanCi Shen

  • Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

BaoFa Zhang

  • Beijing Institute of Aeronautical Materials, P.O. Box 81-26, Beijing 100095, China

  • *Electronic address: pinghengtan@hotmail.com, phtan@red.semi.ac.cn

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Vol. 64, Iss. 21 — 1 December 2001

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