Si- and Be-doped ${\mathrm{Ga}}_{1-3x}{\mathrm{In}}_{3x}{\mathrm{N}}_x{\mathrm{As}}_{1-x}(0\mathrm{}<~x<~3\%)$ layers are grown on GaAs substrates by gas-source molecular beam epitaxy with a nitrogen radical beam source. The carrier concentration and mobility are observed to decrease substantially with increasing nitrogen content in both p- and n-type GaInNAs films. After rapid thermal annealing at 750 °C, the Be dopants are almost fully activated in p-type material; yet only a small fraction of the Si dopants are activated in n-type GaInNAs films. At low temperature a broad photoluminescence band centered at 1.041 eV (about 120 meV below the band gap) is observed in n-type GaInNAs, which suggests the possible compensating centers present in Si-doped GaInNAs.

• Received 20 March 2001

DOI:https://doi.org/10.1103/PhysRevB.64.113308