Initial stage of GaN growth and its implication to defect formation in films

S. H. Cheung, L. X. Zheng, M. H. Xie, S. Y. Tong, and N. Ohtani
Phys. Rev. B 64, 033304 – Published 8 June 2001
PDFExport Citation

Abstract

In situ scanning tunneling microscopy (STM) observations of initial growth processes of GaN by molecular-beam epitaxy reveal important differences between growth on vicinal versus flat SiC(0001) substrates. Based on stop-growth STM studies, we explain why there are orders of magnitude reductions in the density of threading screw dislocations in the vicinal films. It is shown that on vicinal surfaces, three-dimensional (3D) islands develop into a characteristic shape. The islands coalesce much sooner than on flat surfaces. Consequently, fewer defects are created at their boundaries.

  • Received 8 March 2001

DOI:https://doi.org/10.1103/PhysRevB.64.033304

©2001 American Physical Society

Authors & Affiliations

S. H. Cheung, L. X. Zheng, M. H. Xie*, and S. Y. Tong

  • Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong

N. Ohtani

  • Nippon Steel Corporation, Advanced Technology Research Laboratory, 5-10-1 Fuchinobe, Sagamihara, 229-8551 Japan

  • *Corresponding author. Email address: mhxie@hkusua.hku.hk

References (Subscription Required)

Click to Expand
Issue

Vol. 64, Iss. 3 — 15 July 2001

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×