Two-color picosecond and continuous-wave experiments on anti-Stokes and Stokes carrier-transfer phenomena in GaAs/AlxGa1xAs and InGaP2/AlxGa1xAs heterostructures

S. C. Hohng, D. W. Khang, Y. H. Ahn, J. Y. Lee, S. Y. Kihm, D. H. Kim, W. S. Kim, J. C. Woo, D. S. Kim, D. S. Citrin, D. H. Woo, E. K. Kim, S. H. Kim, and K. S. Lim
Phys. Rev. B 60, 8883 – Published 15 September 1999
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Abstract

We present direct evidence of the two-step absorption process in anti-Stokes photoluminescence in both GaAs/AlxGa1xAs and InGaP2/AlxGa1xAs heterostructures using two-color picosecond and continuous-wave photoluminescence experiments. We show information about the lifetime of the defect states that participate in the two-step absorption process. As a result, we conclude that the long-lived states rather than excitons play the dominant role in the two-step absorption process. We also study the possible contribution of the two-step absorption process to Stokes carrier transfer in GaAs/AlxGa1xAs asymmetric double quantum well structures.

  • Received 18 May 1999

DOI:https://doi.org/10.1103/PhysRevB.60.8883

©1999 American Physical Society

Authors & Affiliations

S. C. Hohng, D. W. Khang, Y. H. Ahn, J. Y. Lee, S. Y. Kihm, D. H. Kim, W. S. Kim, J. C. Woo, and D. S. Kim*

  • Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea

D. S. Citrin

  • Department of Physics, Washington State University, Pullman, Washington 99164-2814

D. H. Woo, E. K. Kim, and S. H. Kim

  • Korea Institute of Science and Technology, Cheongryang, Seoul 136-791, Korea

K. S. Lim

  • Department of Physics, Chungbuk National University, Chungju 360-763, Korea

  • *Electronic address: denny@phya.snu.ac.kr

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Vol. 60, Iss. 12 — 15 September 1999

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