First-principles study of vacancy formation and migration energies in tantalum

Alessandra Satta, F. Willaime, and Stefano de Gironcoli
Phys. Rev. B 60, 7001 – Published 1 September 1999
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Abstract

The vacancy formation and migration enthalpies Hf and Hm in tantalum are calculated by means of ab initio pseudopotential techniques. The results obtained after relaxation with supercells containing 54 atomic sites (Hf=3.0 eV and Hm=0.8 eV) are in excellent agreement with experiments (Hf=3.1 eV and Hm=0.7 eV). The electronic entropy has a moderate influence on their temperature dependence. The effects of structural relaxation, which reduce Hf by 14%, are significantly larger than for group-VI elements and are typical of a normal behavior for the bcc structure. The experimental tracer self-diffusion coefficient is well reproduced within the rate theory using an estimate of the vibrational formation entropy and the attempt frequency.

  • Received 19 April 1999

DOI:https://doi.org/10.1103/PhysRevB.60.7001

©1999 American Physical Society

Authors & Affiliations

Alessandra Satta

  • Section de Recherches de Métallurgie Physique, CEA/Saclay, 91191 Gif-sur-Yvette, France
  • Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Cagliari, Cittadella Universitaria, 09042 Monserrato (CA), Italy

F. Willaime

  • Section de Recherches de Métallurgie Physique, CEA/Saclay, 91191 Gif-sur-Yvette, France

Stefano de Gironcoli

  • Istituto Nazionale per la Fisica della Material (INFM) and Scuola Internazionale Superiore di Studî Avanzati (SISSA), via Beirut 2-4, 34014 Trieste, Italy

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Issue

Vol. 60, Iss. 10 — 1 September 1999

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