Analysis of the effect of isotope scattering on the thermal conductivity of crystalline silicon

W. S. Capinski, H. J. Maris, and S. Tamura
Phys. Rev. B 59, 10105 – Published 15 April 1999
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Abstract

We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the 28Si isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon.

  • Received 8 May 1998

DOI:https://doi.org/10.1103/PhysRevB.59.10105

©1999 American Physical Society

Authors & Affiliations

W. S. Capinski and H. J. Maris

  • Department of Physics, Brown University, Providence, Rhode Island 02912

S. Tamura

  • Department of Applied Physics, Hokkaido University, Sapporo 060, Japan

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Vol. 59, Iss. 15 — 15 April 1999

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