Abstract
We present an analysis of recent thermal-conductivity measurements on crystalline silicon in which the concentration of the isotope has been increased above the natural abundance. We calculate from the phonon Boltzmann equation the change in the conductivity due to a change in isotope concentration. The conductivity change is evaluated numerically using a realistic model of the lattice dynamics of silicon.
- Received 8 May 1998
DOI:https://doi.org/10.1103/PhysRevB.59.10105
©1999 American Physical Society