Electronic structure and total energy of transition metals from an spd tight-binding method: Application to surfaces and clusters of Rh

C. Barreteau, D. Spanjaard, and M. C. Desjonquères
Phys. Rev. B 58, 9721 – Published 15 October 1998
PDFExport Citation

Abstract

We present a method for obtaining a transferable tight-binding parametrization of the valence band of monoatomic transition metals in an orthogonal spd basis set. This method, which is based on a fit to bulk ab initio calculations, allows the determination of both the electronic structure and the total energy in geometrically homogeneous systems as well as in systems where not all atoms are equivalent. It is applied to rhodium and the results for surfaces and small clusters are compared with first-principles calculations. The agreement is excellent and thus this parametrization will be very useful for the study of extended defects.

  • Received 11 December 1997

DOI:https://doi.org/10.1103/PhysRevB.58.9721

©1998 American Physical Society

Authors & Affiliations

C. Barreteau

  • Commissariat à l’Energie Atomique, DSM/DRECAM/SRSIM, Centre d’Etudes de Saclay, F-91 191 Gif sur Yvette, France

D. Spanjaard

  • Laboratoire de Physique des Solides, Université Paris Sud, F-91 405 Orsay, France

M. C. Desjonquères

  • Commissariat à l’Energie Atomique, DSM/DRECAM/SRSIM, Centre d’Etudes de Saclay, F-91 191 Gif sur Yvette, France

References (Subscription Required)

Click to Expand
Issue

Vol. 58, Iss. 15 — 15 October 1998

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×