Carrier diffusion in Cd1xMnxTe

C. Moussu, I. Zaquine, A. Maruani, and R. Frey
Phys. Rev. B 58, 7753 – Published 15 September 1998
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Abstract

Carrier diffusion and electron-hole recombination are shown to be considerably slowed down in Cd1xMnxTe semimagnetic semiconductors due to the efficient trapping of electrons on manganese sites. The theoretical interpretation is based on population dynamics, charge continuity equations, and Poisson’s law. A simple analytical solution of this complicated system of equations is in very good agreement with the numerical one for a large range of durations of the write pulses (from 100 ps to 1 μs). Both calculations predict a reduction of electron mobility by a factor of 6000. These theoretical predictions are confirmed by the results of an experimental study performed by using the simple grating technique: We observe the temporal evolution of the diffracted signal when a continuous read beam is used to read gratings of different wavelengths encoded in the material by interfering write laser pulses. An effective ambipolar mobility of 0.54cm2/Vs is measured, which provides a value of 3400cm2/Vs for the intrinsic mobility in Cd0.7Mn0.3Te. This low ambipolar mobility could make this efficient material potentially interesting for parallel optical processing in the microsecond range.

  • Received 23 February 1998

DOI:https://doi.org/10.1103/PhysRevB.58.7753

©1998 American Physical Society

Authors & Affiliations

C. Moussu, I. Zaquine, and A. Maruani

  • Ecole Nationale Supérieure des Télécommunications, Département Traitement du Signal et des Images, 46 rue Barrault, 75634 Paris Cédex 13, France

R. Frey

  • Ecole Nationale Supérieure des Télécommunications, Département Traitement du Signal et des Images, 46 rue Barrault, 75634 Paris Cédex 13, France
  • Laboratoire d’Optique Quantique du Centre National de la Recherche Scientifique, Ecole Polytechnique, 91128 Palaiseau Cédex, France

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Issue

Vol. 58, Iss. 12 — 15 September 1998

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