Electron and hole transport in undoped Bi0.96Sb0.04 alloys

B. Lenoir, M. O. Selme, A. Demouge, H. Scherrer, Yu. V. Ivanov, and Yu. I. Ravich
Phys. Rev. B 57, 11242 – Published 1 May 1998
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Abstract

The complete set of the 12 independent galvanomagnetic coefficients was measured in weak magnetic fields in undoped Bi0.96Sb0.04 alloys within the temperature range 77–300 K. The analysis of these coefficients together with the two components of thermopower was fulfilled by the least-squares method using Hall and magnetoresistance factors. These factors were calculated based on a model taking into account the peculiarities of the band structure and the scattering of electrons and holes by acoustic phonons, as well as interband (recombination) scattering. The temperature dependence of carrier mobilities and densities was estimated and compared with that of pure bismuth. The mobilities of T holes are lower than those of electrons, and the difference in the alloy is more pronounced than in pure bismuth. The deviation from unity of the Hall and magnetoresistance factors of L electrons is greater than in bismuth. This result is confirmed through direct analysis of the experimental data on the galvanomagnetic coefficients.

  • Received 17 November 1997

DOI:https://doi.org/10.1103/PhysRevB.57.11242

©1998 American Physical Society

Authors & Affiliations

B. Lenoir, M. O. Selme, A. Demouge, and H. Scherrer

  • Laboratoire de Physique des Matériaux, UMR 7556, Ecole des Mines, Parc de Saurupt, 54042 Nancy, France

Yu. V. Ivanov

  • A.F. Ioffe Physical-Technical Institute, 194021, St. Petersburg, Russia

Yu. I. Ravich

  • St. Petersburg State Technical University, 195251, St. Petersburg, Russia

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Issue

Vol. 57, Iss. 18 — 1 May 1998

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