The electrical resistivity (ρ), magnetoresistance (MR), Hall coefficient ${(R}_H)$ of ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ thin film, and MR of ${\mathrm{Nd}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ polycrystalline samples have been studied over a wide temperature range and in high-magnetic fields up to 20 T. In the ferromagnetic (FM) phase, $\rho \mathrm{}\left(T\right)\mathrm{}$ follows an expression $a_0{+a}_2{T}^2{+a}_4{T}^4$ with and without applied field. This temperature dependence may be understood on the basis of scattering of charge carriers due to spin fluctuations. At low temperatures, magnetoconductivity of ${\mathrm{Nd}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ increases linearly with $H$ up to 20 T whereas for ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ deviation from linearity is observed in the high-field region. The Hall coefficient of ${\mathrm{La}}_{2/3}{\mathrm{Sr}}_{1/3}{\mathrm{MnO}}_3$ shows strong temperature dependence due to the skew scattering by the magnetic moments and exhibited the temperature dependence ${(T}^2)$ principally due to that of the magnetization. The anomalous part of the Hall coefficient is zero at $T=0,$ becomes negative with increasing temperature, and its magnitude is comparable with a normal component. The anomalous nature of the Hall resistivity is also reflected in the field dependence of $R_H.$ The carrier density calculated from the normal Hall coefficient part is $3.5\times {10}^{21}/\mathrm{cc}.$

• Received 6 November 1997

DOI:https://doi.org/10.1103/PhysRevB.57.10256