Bond-order potentials: Theory and implementation

A. P. Horsfield, A. M. Bratkovsky, M. Fearn, D. G. Pettifor, and M. Aoki
Phys. Rev. B 53, 12694 – Published 15 May 1996
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Abstract

The background theory and the details required for implementation of bond-order potentials are presented in a systematic fashion. The theory is an O(N) implementation of tight binding that is naturally parallelizable. Further, it is straightforward to show how the lowest-order approximation to the two-site expansion can reproduce the Tersoff potential. The accuracy of the forces is demonstrated by means of constant-energy molecular dynamics, for which the energy is found to be very well conserved. Thus, the method is both an efficient computational method and a useful analytic tool for the atomistic simulation of materials. © 1996 The American Physical Society.

  • Received 9 February 1996

DOI:https://doi.org/10.1103/PhysRevB.53.12694

©1996 American Physical Society

Authors & Affiliations

A. P. Horsfield, A. M. Bratkovsky, M. Fearn, D. G. Pettifor, and M. Aoki

  • Oxford University, Department of Materials, Parks Road, Oxford OX1 3PH, United Kingdom

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Vol. 53, Iss. 19 — 15 May 1996

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