Test of the Peierls-Nabarro model for dislocations in silicon

Q. Ren, B. Joós, and M. S. Duesbery
Phys. Rev. B 52, 13223 – Published 1 November 1995; Erratum Phys. Rev. B 53, 11883 (1996)
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Abstract

We show, using an atomistic model with a Stillinger-Weber potential (SWP), that in the absence of reconstruction, the basic assumption of the Peierls-Nabarro (PN) model that the dislocation core is spread within the glide plane is verified for silicon. The Peierls stress (PS) obtained from the two models are in quantitative agreement (≊0.3μ), when restoring forces obtained from first principles generalized stacking-fault energy surfaces are used in the PN model [B. Joós, Q. Ren, and M. S. Duesbery, Phys. Rev. B 50, 5890 (1994)]. The PS was found to be isotropic in the glide plane. Within the SWP model no evidence of dissociation in the shuffle dislocations is found but glide sets do separate into two partials.

  • Received 24 May 1995

DOI:https://doi.org/10.1103/PhysRevB.52.13223

©1995 American Physical Society

Erratum

Erratum: Test of the Peierls-Nabarro model for dislocations in silicon

Q. Ren, B. Joós, and M. S. Duesbery
Phys. Rev. B 53, 11883 (1996)

Authors & Affiliations

Q. Ren and B. Joós

  • Ottawa Carleton Institute of Physics, University of Ottawa Campus, Ottawa, Ontario, Canada K1N 6N5

M. S. Duesbery

  • Fairfax Materials Research Inc., 5613 Marble Arch Way, Alexandria, Virginia 22315-4011

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Vol. 52, Iss. 18 — 1 November 1995

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