Ab initio calculation of structural and lattice-dynamical properties of silicon carbide

K. Karch, P. Pavone, W. Windl, O. Schütt, and D. Strauch
Phys. Rev. B 50, 17054 – Published 15 December 1994
PDFExport Citation

Abstract

The plane-wave pseudopotential approach to density-functional theory (DFT) in the local-density approximation has been applied to investigate a variety of ground-state properties of the 3C, 2H, and 4H polytypes of silicon carbide. The linear-response theory within DFT has been used to obtain lattice-dynamical properties of cubic SiC such as the phonon-dispersion curves, phonon eigenvectors, elastic and Grüneisen constants, as well as the thermal expansion coefficient and specific heat within the quasiharmonic approximation. Finally, we present some results for phonon-dispersion curves in the hexagonal 2H (wurtzite) and 4H structure. These results are analyzed and discussed in view of further applications to temperature-dependent properties.

  • Received 8 August 1994

DOI:https://doi.org/10.1103/PhysRevB.50.17054

©1994 American Physical Society

Authors & Affiliations

K. Karch, P. Pavone, W. Windl, O. Schütt, and D. Strauch

  • Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany

References (Subscription Required)

Click to Expand
Issue

Vol. 50, Iss. 23 — 15 December 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×