Experimental study of the excitation threshold of fast intrinsic luminescence of CsI

A. N. Belsky, A. N. Vasil’ev, V. V. Mikhailin, A. V. Gektin, P. Martin, C. Pedrini, and D. Bouttet
Phys. Rev. B 49, 13197 – Published 1 May 1994
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Abstract

A type of intrinsic luminescence in crystals has been revealed. The excitation threshold of well-known fast intrinsic luminescence of CsI (300 nm band) has been obtained from the excitation spectrum measured in the photon-energy range 5–125 eV at 300 K using synchrotron radiation. The excitation starts from an energy of about 20 eV and exponentially increases up to the 4d I ionization energy (∼50 eV). Such high-energy broad threshold is not typical for any conventional mechanisms of luminescence excitation. We attribute this type of luminescence to the emission center, which is created by the interaction of several elementary excitations produced in the process of relaxation of a primary excitation. The possible role of 4d I core levels is discussed. The nanosecond decay kinetics of this luminescence is nonexponential for all energies of excitation.

  • Received 8 October 1993

DOI:https://doi.org/10.1103/PhysRevB.49.13197

©1994 American Physical Society

Authors & Affiliations

A. N. Belsky, A. N. Vasil’ev, and V. V. Mikhailin

  • Synchrotron Radiation Laboratory, Physics Department, Moscow State University, 119899 Moscow, Russia

A. V. Gektin

  • Institute for Single Crystals, 310141 Kharkov, Ukraine

P. Martin

  • Laboratoire pour l’Utilisation du Rayonnement Electromagnetique, Centre National de la Recherche Scientifique, Bâtiment 209D, Centre Universitaire Paris-Sud, 91405 Orsay Cedex, France
  • Centre de Recherches Nucléaires, 23 rue du Loess, 67037 Strasbourg Cedex, France

C. Pedrini and D. Bouttet

  • Laboratoire de Physico-Chimie des Matériaux Luminescents, Université Lyon I, Bâtiment 205, 43, boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France

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Vol. 49, Iss. 18 — 1 May 1994

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