Far-infrared photon-assisted transport through quantum point-contact devices

Shechao Feng and Qing Hu
Phys. Rev. B 48, 5354 – Published 15 August 1993
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Abstract

We analyze theoretically the phenomenon of photon-assisted quantum transport in split-gate quantum point-contact devices. Both the transverse and longitudinal polarization configurations for the ac photon field are considered. We predict that ministeps should appear in the drain/source conductance versus gate voltage relation, as well as in the I-VDS curve in the nonlinear regime, for a quantum point contact irradiated with a coherent far-infrared radiation. The width of the ministeps is proportional to the radiation frequency and the height of the ministeps is a function of the radiation power. We then calculate the current responsivity for this photon-assisted process in the limit of a small radiation signal and show that it is quite comparable to the quantum efficiency e/ħω at and above 1 THz if the rf impedance of the device can be matched to that of a planar antenna.

  • Received 22 February 1993

DOI:https://doi.org/10.1103/PhysRevB.48.5354

©1993 American Physical Society

Authors & Affiliations

Shechao Feng

  • Department of Physics, University of California, Los Angeles, California 90024

Qing Hu

  • Department of Electrical Engineering and Computer Science and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

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Vol. 48, Iss. 8 — 15 August 1993

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